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Thermal Evaporation VS Sputtering Deposition

  Thermal Evaporation Sputtering Deposition
Rate Thousand atomic layers at a time (thickness control is difficult) One atomic layer at a time (thickness control is possible)
Source of Materials Limited (to those with low melting point) Almost unlimited
Purity Better Possibility of incorporating impurity
Surface Damage Very low Ionic bombardment damage
Adhesion Often Poor Good (on most materials)
Uniformity Difficult to control Easy to control
Film Properties Difficult to control Can be controlled by pressure and temperature

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