| Thermal Evaporation | Sputtering Deposition | |
|---|---|---|
| Rate | Thousand atomic layers at a time (thickness control is difficult) | One atomic layer at a time (thickness control is possible) |
| Source of Materials | Limited (to those with low melting point) | Almost unlimited |
| Purity | Better | Possibility of incorporating impurity |
| Surface Damage | Very low | Ionic bombardment damage |
| Adhesion | Often Poor | Good (on most materials) |
| Uniformity | Difficult to control | Easy to control |
| Film Properties | Difficult to control | Can be controlled by pressure and temperature |
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